Light emission excited by hot electrons in MgF₂ thin-film devicesSHU, Q. Q; ZU, Z. R; LU, J. W et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 6193-6195, issn 0021-8979, 3 p.Article

CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF MODULATION-DOPED FIELD-EFFECT TRANSISTORSLEE K; SHUR MS; DRUMMOND TJ et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 207-212; BIBL. 10 REF.Article

ELECTRON-VELOCITY SATURATION AT A BJT COLLECTOR JUNCTION UNDER LOW-LEVEL CONDITIONSWARNER RM JR; DONG HYUK JU; GRUNG BL et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 230-236; BIBL. 26 REF.Article

THEORIE DES DOMAINES MAGNETIQUES CYLINDRIQUES TRAVERSANT OU NE TRAVERSANT PAS LES DISPOSITIFS MINCES MULTICOUCHESRED'KO VG; SKOBELIN GV.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 2; PP. 143-150; BIBL. 11 REF.Article

ANALYSIS OF CAMEL GATE FET'S (CAMFET'S)THORNE RE; SHUN LIN SU; FISCHER RJ et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 212-216; BIBL. 5 REF.Article

INTRINSIC RESPONSE TIME MEASUREMENTS IN UNIFORM AND NONUNIFORM FIELD AVALANCHE REGIONS IN GAASPERDOMO J; LEE CA.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 217-223; BIBL. 16 REF.Article

Thin film electroluminescent displays produced by atomic layersSUTELA, T.Displays. 1984, Vol 5, Num 2, pp 73-78, issn 0141-9382Article

Measuring on thin film electroluminescent devicesMÜLLER, G. O; MACH, R; SELLE, B et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 657-669, issn 0031-8965Article

A computationally simple model for hysteretic thin-film electroluminescent devicesJAREM, J. M; SINGH, V. P.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1834-1841, issn 0018-9383, 1Article

Percolating cermet thin-film thermistors between 50 mk-300 K and 0-20 TGERSHENFELD, N. A; VANCLEVE, J. E; WEBB, W. W et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4760-4762, issn 0021-8979Article

Effect of surface states of WO₃ on the operating characteristics of thin film electrochromic devicesYOSHIMURA, T; WATANABE, M; KOIKE, Y et al.Thin solid films. 1983, Vol 101, Num 2, pp 141-151, issn 0040-6090Article

THIN-FILM PHOTODETECTORS WITH HIGH QUANTUM YIELDS ACHIEVED BY INDUCED RESONANCE TOTAL ABSORPTIONPOHLACK H.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 179-185; ABS. GER; BIBL. 36 REF.Article

NONRECIPROCAL HF SIGNAL TRANSMISSION BY SURFACE HELIUMRUIBYS G; TOLUTIS R.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 273; BIBL. 3 REF.Article

Broad band emission behaviors in ZnS thin film electroluminescent devicesNAKANO, R; MATSUMOTO, H; ENDO, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2103-L2104, issn 0021-4922, part 2Article

Tunnel junctions with yttrium oxide barrier and various ferromagnetic electrodesDIMOPOULOS, Theodoros; GIERES, Günter; COLIS, Silviu et al.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 2296-2298, issn 0018-9464, 3 p., 2Conference Paper

SnO₂ based sensors of smokeBRYNZARI, V; DMITRIEV, S; KOROTCHENKOV, G et al.International conference on microelectronic. 1997, pp 547-550, isbn 0-7803-3664-X, 2VolConference Paper

Thin-film microprobe with bilayer lipid membrane for advanced pH-meterTVAROZEK, V; OTTOVA-LEITMANNOVA, A; NOVOTNY, I et al.International conference on microelectronic. 1997, pp 543-546, isbn 0-7803-3664-X, 2VolConference Paper

Ferromagnetic ultra-small tunnel junction devices fabricated by scanning probe microscope (SPM) local oxidationSHIRAKASHI, Jun-Ichi; TAKEMURA, Yasushi.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 2640-2642, issn 0018-9464, 3 p., 2Conference Paper

Humidity sensing properties of (Ba, Sr) TiO₃ thin films grown by hydrothermal-electrochemical methodAGARWAL, Seema; ROY, Somnath C; SHARMA, G. L et al.SPIE proceedings series. 2002, pp 527-529, isbn 0-8194-4500-2, 2VolConference Paper

FLOW DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORSHIRAI Y; OSADA Y; KOMATSU T et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 701-703; BIBL. 8 REF.Article

PERFORMANCE OF THIN-FILM-TRANSISTOR-ADDRESSED LIQUIDE-CRYSTAL DISPLAY CIRCUITSFANG CHEN LUO; PULTORAK D; FREEMAN E et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 202-206; BIBL. 5 REF.Article

A PLANAR THIN-FILM SQUID OF HIGH INDUCTIVE COUPLING CONSTANTBONDARENKO SI; KRAVCHENKO VV; LEMESHKO NM et al.1983; CRYOGENICS (SURREY); ISSN 0011-2275; GBR; DA. 1983; VOL. 23; NO 5; PP. 263-264; BIBL. 3 REF.Article

APPLICATIONS OF RESISTIVE THIN FILMS IN ELECTRONICS.KIRBY PL.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 50; PP. 211-221; BIBL. 6 REF.Article

ELECTRON-BEAM FABRICATION OF 80-A METAL STRUCTURES.BROERS AN; MOLZEN WW; CUOMO JJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 596-598; BIBL. 17 REF.Article

SEMIAUTOMATIC MEASUREMENTS OF THIN-FILM BREAKDOWN VOLTAGESGAEBLER W; CONRAD R; BRAEUNIG D et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 10; PP. 1218-1222; BIBL. 5 REF.Article